Taichung, Taiwan

Kuang-Chih Wang

This inventor holds 3 USPTO granted patents. Top assignees: United Integrated Circuits Corp., Winbond Electronics Corporation. Active years: 1997-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kuang-Chih Wang. Retrieved from https://idiyas.com/inventor/kuang-chih-wang-vlkr965a

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 3

Forward Citations = 40(Granted Patents)


Location History:

  • Houli Hsiang Taichung Hsien, TW (2000)
  • Taichung Hsien, TW (1997 - 2001)

Company Filing History:


Years Active: 1997-2001

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3 patents (USPTO):Explore Patents

Title: Innovations of Kuang-Chih Wang

Introduction

Kuang-Chih Wang is a notable inventor based in Taichung Hsien, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, holding a total of three patents. His work focuses on advanced processes that enhance the efficiency and effectiveness of semiconductor devices.

Latest Patents

One of his latest patents is a dual damascene manufacturing process. This process involves several steps, starting with the provision of a semiconductor substrate that has an insulating layer. A trench and a via opening are formed within this insulating layer. A first glue layer, preferably titanium, is then applied over the trench and via opening. Following this, photolithographic and etching operations are used to remove part of the first glue layer, exposing a portion of the insulating layer while keeping the trench and via opening covered. A second glue layer, preferably titanium nitride, is formed over the first glue layer and insulating layer. A metallic layer is then deposited, filling the trench and via opening completely. The second glue layer and metallic layer have a polishing selectivity ratio of about 1:1, allowing for a polishing operation that removes excess material above the insulating layer.

Another significant patent by Wang is a method of improving selectivity between silicon nitride and silicon oxide. In this method, a pad oxide is formed on a substrate, followed by the deposition of a silicon nitride layer using low pressure chemical vapor deposition or plasma enhanced chemical vapor deposition. The silicon nitride is then implanted with boron ions to transform it into boron nitride. This is followed by a conventional method to form shallow trench isolation.

Career Highlights

Throughout his career, Kuang-Chih Wang has worked with prominent companies in the semiconductor industry. He has been associated with United Integrated Circuits Corporation and Winbond Electronics Corporation, where he has contributed to various innovative projects and advancements in semiconductor technology.

Conclusion

Kuang-Chih Wang's contributions to semiconductor manufacturing through his patents and career achievements highlight his role as a significant inventor in the field. His innovative processes continue to influence the development of advanced semiconductor technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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