The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2001
Filed:
Oct. 14, 1998
Kuang-Chih Wang, Taichung Hsien, TW;
United Integrated Circuits Corp., Hsinchu, TW;
Abstract
A dual damascene process of manufacturing dual damascene structure comprising the steps of first providing a semiconductor substrate that already has an insulating layer formed thereon. Next, a trench and a via opening are formed within the insulating layer. In the subsequent step, a first glue layer, preferably a titanium layer, is formed over the trench and the via opening. Thereafter, photolithographic and etching operations are again used to remove a portion of the first glue layer in a region surrounding the trench. Consequently, a portion of the insulating layer is exposed while the trench and the via opening are still covered by the first glue layer. After that, a second glue layer, preferably a titanium nitride layer, is formed over the first glue layer and the insulating layer. Then, a metallic layer is formed over the second glue layer. The metallic layer completely fills the trench and the via opening. The second glue layer and the metallic layer have a polishing selectivity ratio of about 1:1. Finally, a polishing operation is performed to remove a portion of the metallic layer and second glue layer above the insulating layer.