Kuan-Liang Lai

Title: Kuan-Liang Lai: Innovator in Semiconductor Technology

Introduction

Kuan-Liang Lai is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of four patents. His work focuses on innovative structures and methods that enhance the performance and reliability of semiconductor devices.

Latest Patents

One of Kuan-Liang Lai's latest patents is titled "Semiconductor device structure with protected bump and method of forming the same." This patent describes a method that includes forming a seed layer over a semiconductor substrate, which is then used to create a metal layer and a metal pillar bump through a two-step plating process. The method also involves a second passivation layer that features a protrusion portion surrounding the metal pillar bump. Another notable patent is "Profile of through via protrusion in 3DIC interconnect." This patent outlines an interconnect structure for three-dimensional integrated circuits (3DIC), detailing a substrate with a tapered profile portion that enhances the interconnect's performance.

Career Highlights

Kuan-Liang Lai is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to push the boundaries of semiconductor technology and contribute to advancements in integrated circuit design.

Collaborations

Kuan-Liang has collaborated with notable colleagues such as Jiung Wu and Ming-Tsu Chung. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the semiconductor field.

Conclusion

Kuan-Liang Lai is a distinguished inventor whose work in semiconductor technology has led to several impactful patents. His contributions continue to shape the future of integrated circuits and semiconductor devices.