The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2021
Filed:
Nov. 27, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hui-Min Huang, Taoyuan, TW;
Wei-Hung Lin, Xinfeng Township, Hsinchu County, TW;
Wen-Hsiung Lu, Tainan, TW;
Ming-Da Cheng, Taoyuan, TW;
Chang-Jung Hsueh, Taipei, TW;
Kuan-Liang Lai, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;
Abstract
Structures and formation methods of a semiconductor device structure are provided. The method includes forming a seed layer to cover a first passivation layer over a semiconductor substrate. The method also includes forming a metal layer to partially cover the seed layer by using the seed layer as an electrode layer in a first plating process and forming a metal pillar bump over the metal layer by using the seed layer as an electrode layer in a second plating process. In addition, the method includes forming a second passivation layer over the metal layer, wherein the second passivation layer includes a protrusion portion extending from a top surface of the second passivation layer and surrounding the sidewall of the metal pillar bump.