Taiwan Semiconductor Manufacturing Comp. Ltd.

Kuan-Liang Lai

Chen-Hua Douglas Yu

Shin-Puu Jeng

Wen-Chih Chiou

Tsang-Jiuh Wu

Ku-Feng Yang

Ming-Tsu Chung

Hong-Ye Shih

Jiung Wu

Ming-Da Cheng

Wei-Hung Lin

Wen-Hsiung Lu

Hui-Min Huang

Chang-Jung Hsueh

Structures and formation methods of a semiconductor device structure are provided. The method includes forming a seed layer to cover a first passivation layer over a semiconductor substrate. The method also includes forming a metal layer to partially cover the seed layer by using the seed layer as an electrode layer in a first plating process and forming a metal pillar bump over the metal layer by using the seed layer as an electrode layer in a second plating process. In addition, the method includes forming a second passivation layer over the metal layer, wherein the second passivation layer includes a protrusion portion extending from a top surface of the second passivation layer and surrounding the sidewall of the metal pillar bump.

Semiconductor device structure with protected bump and method of forming the same

An interconnect structure for an integrated circuit, such as a three dimensional integrated circuit (3DIC), and a method of forming the same is provided. An example interconnect structure includes a substrate, a through via extending through the substrate, and a liner disposed between the substrate and the through via. The substrate includes a tapered profile portion. The tapered profile portion abuts the liner.

Profile of through via protrusion in 3DIC interconnect

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Tainan, Taiwan

Kuan-Liang Lai