This inventor holds 1 USPTO granted patent. Top assignees: United Microelectronics Corp., United Semiconductor Corp.. Active years: 2000.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
1 out of 7,288 
1 out of 130 Years Active: 2000
Title: Kuai-Jung Ho: Copper Diffusion Prevention
Introduction
Kuai-Jung Ho is an inventor associated with Hsinchu, Taiwan. His work includes a patent addressing the prevention of metal diffusion in copper damascene processes. His patent portfolio includes 1 patent.
Latest Patents
Ho’s patent, “Retardation Layer for Preventing Diffusion of Metal Layer,” describes a laminated layer designed to replace a conventional barrier layer. The laminate combines a barrier layer with a porous layer, which can be positioned above or below the barrier to improve resistance to copper atom diffusion. The patent identifies placing the porous layer above the barrier layer as the preferred arrangement.
Career Highlights
Ho’s listed company affiliations include United Microelectronics Corporation and United Semiconductor Corporation. His patent work focuses on materials and fabrication methods for copper damascene processes.
Collaborations
Ho’s listed coworkers include Chi-Chin Yeh and Ming-Ching Huang.
Conclusion
Kuai-Jung Ho’s patent presents a laminated barrier approach intended to limit copper diffusion, reflecting his contributions to semiconductor fabrication technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile