The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2000
Filed:
Sep. 30, 1999
Ming-Ching Huang, Nantou Hsien, TW;
Chih-Rong Chen, Chupei, TW;
Kuai-Jung Ho, Hsinchu, TW;
Wen-Yuan Huang, Hsinchu Hsien, TW;
Chi-Chin Yeh, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
United Semiconductor Corp., Hsinchu, TW;
Abstract
A retardation layer of a copper damascene process and the fabrication method thereof, to replace the conventional barrier layer with a laminated layer. The laminated layer combines the conventional barrier layer with a porous layer, wherein the porous layer can be formed either above or below the barrier layer to improve the retardation of the copper atom diffusion. Preferably, the porous layer is formed above the barrier layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile