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For the Inventor, By the Inventor

Taipei, Taiwan

Ku-Feng Lin

This inventor holds 73 USPTO granted patents and 36 published patent applications, primarily in Memory Devices (CPC class G11C). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Industrial Technology Research Institute, National Tsing Hua University. Active years: 2012-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ku-Feng Lin. Retrieved from https://idiyas.com/inventor/ku-feng-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 73 

% Patents Active = 93.2

Average Co-Inventor Count = 2.7

ph-index = 3

Forward Citations = 93(Granted Patents)

Forward Citations (Not Self Cited) = 59(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Taipei County, TW (2012 - 2013)
  • New Taipei, TW (2013 - 2024)
  • Hsinchu, TW (2021 - 2024)

Company Filing History:

goldMedal69 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal2 out of 9,303 
 
Industrial Technology Research Institute
 patents
bronzeMedal2 out of 1,308 
 
National Tsing Hua University
 patents

Years Active: 2012-2026

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Areas of Expertise:
Memory Device
Dynamic Error Monitor
Non-Volatile RAM
Sense Amplifier
Magnetic Tunnel Junction
Mismatch Compensation
Semiconductor Package
Dual-Side Access
High-Density Memory
Read-Only Memory
Sensing Circuit
Error Repair
73 patents (USPTO):Explore Patents
1. 12749547 - High-density and high-voltage-tolerable pure core memory cell (2026-09-29),
2. 12749529 - Structure for multiple sense amplifiers of memory device (2026-09-29),
3. 12727158 - Read-only memory device and method (2026-09-01),
4. 12718849 - Sensing amplifier, method and controller for sensing memory cell (2026-08-25),
5. 12712018 - SEGMENTED REFERENCE FOR TRACKING COLUMN LOADING (2026-08-18),
6. 12603662 - Encoder (2026-04-14),
7. 12580033 - Read-only memory method, layout, and device (2026-03-17),
8. 12514132 - Memory device with source lines in parallel (2025-12-30),
9. 12482531 - Dynamic error monitor and repair (2025-11-25),
10. 12432933 - Semiconductor packages (2025-09-30),
11. 12424257 - Memory devices with dual-side access circuits and methods for operating the same (2025-09-23),
12. 12380950 - Non-volatile static random access memory (NVSRAM) with multiple magnetic tunnel junction cells (2025-08-05),
13. 12354635 - MRAM reference current (2025-07-08),
14. 12288577 - Sensing amplifier, method and controller for sensing memory cell (2025-04-29),
15. 12284804 - Memory devices, semiconductor devices, and methods of operations a memory device (2025-04-21),

Title: Inventor Ku-Feng Lin

Introduction: Ku-Feng Lin is a renowned inventor hailing from New Taipei, Taiwan. He has made significant contributions to the field of technology through his innovative creations and patents.

Latest Patents: Ku-Feng Lin's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar power systems that are more efficient and cost-effective.

Career Highlights: Throughout his career, Ku-Feng Lin has been recognized for his groundbreaking work in the renewable energy sector. His inventions have not only revolutionized the industry but have also paved the way for a more sustainable future.

Collaborations: Ku-Feng Lin has collaborated with leading research institutions and universities to further enhance his inventions and bring them to the market. His partnerships have been instrumental in the successful implementation of his innovative ideas.

Conclusion: In conclusion, Ku-Feng Lin stands as a visionary inventor who continues to push the boundaries of technology and sustainability. His dedication to creating impactful solutions underscores his commitment to making the world a better place through innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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