The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Aug. 09, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Ku-Feng Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/00 (2006.01); G11C 17/12 (2006.01); H10B 20/00 (2023.01);
U.S. Cl.
CPC ...
H10B 20/50 (2023.02); G11C 17/12 (2013.01); H10B 20/34 (2023.02);
Abstract

A read-only memory (ROM) device includes a complementary field effect transistor (CFET) device which has a first semiconductor device of a first type, and a second semiconductor device of a second type different from the first type. The second semiconductor device is over or under the first semiconductor device. A first word line is electrically coupled to a gate of the first semiconductor device. A second word line is electrically coupled to a gate of the second semiconductor device. At least one bit line is electrically coupled to at least one of a first source/drain of the first semiconductor device, or a first source/drain of the second semiconductor device.


Find Patent Forward Citations

Lin, Ku-Feng. (2026). Read-only memory device and method (U.S. Patent No. 12727158). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12727158

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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