Osaka, Japan

Koji Eriguchi

This inventor holds 25 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignee: Matsushita Electric Industrial Co., Ltd.. Active years: 1997-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Koji Eriguchi. Retrieved from https://idiyas.com/inventor/koji-eriguchi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 84.0

Average Co-Inventor Count = 1.9

ph-index = 10

Forward Citations = 654(Granted Patents)


Location History:

  • Shiga, JP (2002 - 2004)
  • Kusatsu, JP (2003 - 2004)
  • Osaka, JP (1997 - 2005)
  • Ritto, JP (2005 - 2008)

Company Filing History:


Years Active: 1997-2008

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Areas of Expertise:
Semiconductor Device
Optical Evaluation
Micro-Needles
Device Fabrication
High Dielectric Insulating Film
Manufacturing Method
Insulating Film Evaluation
Substrate Examination
Plasma Processing
Deposit Monitoring
MIS Device
Fabrication Process
25 patents (USPTO):Explore Patents

Title: Profile of Inventor Koji Eriguchi: Innovating Semiconductor Technologies

Introduction: Koji Eriguchi is an esteemed inventor based in Osaka, Japan, recognized for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 25 patents, Eriguchi's work is instrumental in advancing electronic devices and enhancing their efficiency.

Latest Patents: Among Eriguchi's latest innovations is a patent for a semiconductor device featuring dummy conductors. This invention involves forming a laminate of a gate insulating film and a gate electrode on a silicon substrate, subsequently creating a conductor connected to the gate electrode, along with a dummy conductor that interfaces with the active region. The process involves a plasma technique to form an interlayer insulating film, allowing for effective charge management through the dummy conductor.

Another noteworthy patent focuses on a semiconductor device that incorporates a memory cell transistor and a trench capacitor within a dedicated memory region. This design also integrates CMOS transistors in a logic circuit region, enhancing device performance. Key features include a bit line contact and an innovative memory cell transistor design that prevents the formation of a silicide layer on the source diffusion layer through specialized dielectric sidewalls.

Career Highlights: Koji Eriguchi has been an integral part of Matsushita Electric Industrial Co., Ltd., where he has shaped the company's direction in semiconductor technology. His deep understanding of the complexities involved in semiconductor devices has established him as a leading figure in this competitive industry.

Collaborations: Throughout his career, Eriguchi has worked alongside talented colleagues, including Takayuki Yamada and Masafumi Kubota. These collaborations have fostered a dynamic environment for innovation, allowing for the sharing of ideas and driving advancements in semiconductor technology.

Conclusion: Koji Eriguchi's innovative spirit and technical expertise continue to propel the semiconductor industry. His contributions are not only recognized through his extensive patent portfolio but also through the lasting impact of his inventions on electronic technology. As he continues to innovate, the future of semiconductor devices looks promising under his influence.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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