The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2004
Filed:
Sep. 11, 2002
Koji Eriguchi, Shiga, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A high dielectric film is formed by utilizing atom injection into a film through ion implantation or the like, and heat treatment. For example, an SiO film which is a thermal oxide film is formed on a silicon substrate , and then Zr ions (Zr ) are injected from a plasma into the SiO film . Thereafter, by annealing the SiO film and a Zr injected layer , injected Zr is diffused in the Zr injected layer and then the SiO film and the Zr injected layer are as a whole changed into a high dielectric film of a high dielectric constant formed of Zr—Si—O (silicate). By using the high dielectric film as an insulating film for an MISFET, an MISFET having excellent gate leakage properties can be achieved.