Matsumoto-city, Japan

Koh Yoshikawa

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Fuji Electric., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Koh Yoshikawa. Retrieved from https://idiyas.com/inventor/koh-yoshikawa-69elwv79

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

Average Co-Inventor Count = 3.0


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Koh Yoshikawa: Innovator in Semiconductor Technology

Introduction

Koh Yoshikawa is a notable inventor based in Matsumoto-city, Japan. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs and manufacturing methods.

Latest Patents

Yoshikawa holds a patent for a semiconductor device that features an edge termination structure. This invention includes a semiconductor substrate with a drift region of a first conductivity type and an active portion that contains either a transistor or a diode. The edge termination structure is designed to enhance the performance of the semiconductor device, incorporating guard rings of a second conductivity type and an embedded dielectric film.

Career Highlights

Koh Yoshikawa is associated with Fuji Electric, Ltd., where he has been instrumental in advancing semiconductor technologies. His work has led to the development of devices that improve efficiency and reliability in various applications.

Collaborations

Yoshikawa has collaborated with talented coworkers, including Kosuke Yoshida and Nao Suganuma, contributing to a dynamic team focused on innovation in semiconductor technology.

Conclusion

Koh Yoshikawa's contributions to semiconductor technology exemplify the spirit of innovation. His patent and work at Fuji Electric, Ltd. highlight his commitment to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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