The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2026

Filed:

Jan. 23, 2023
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventor:

Koh Yoshikawa, Matsumoto-city, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H10D 62/13 (2025.01); H10D 62/17 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 12/481 (2025.01); H10D 62/133 (2025.01); H10D 62/393 (2025.01); H10D 64/513 (2025.01);
Abstract

Provided is a semiconductor device including: a semiconductor substrate; gate trench portions; an emitter electrode; a mesa portion; an emitter region of a first conductivity type provided on an upper surface of the mesa portion and in contact with the gate trench portions; a contact region of a second conductivity type provided on the upper surface of the mesa portion; a base region of a second conductivity type provided below the emitter region and the contact region, in contact with the gate trench portions, and having a lower doping concentration than the contact region; a drift region of a first conductivity type provided below the base region and having a lower doping concentration than the emitter region; and a high resistance portion provided between the emitter electrode and the base region in a depth direction of the semiconductor substrate and having a higher resistance than the emitter region.


Find Patent Forward Citations

Yoshikawa, Koh. (2026). Semiconductor device for improving on voltage and saturation voltage (U.S. Patent No. 12690209). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12690209

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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