Kevin M Houlihan

Title: Kevin M. Houlihan: Innovator in CMOS Technology

Introduction

Kevin M. Houlihan is a prominent inventor based in Boston, MA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of CMOS transistors. With a total of 7 patents to his name, Houlihan's work has had a substantial impact on the industry.

Latest Patents

One of his latest patents focuses on a CMOS transistor with a polysilicon gate electrode that features varying grain size. This innovation reduces polysilicon electrical depletion by depositing polysilicon under controlled conditions, allowing for a variation in crystal grain size throughout the thickness of the material. The resulting CMOS transistor can have multiple depth-wise contiguous regions of different crystalline grain sizes. This selection of grain size is crucial for maximizing dopant activation near the gate dielectric and tailoring the resistance of the polysilicon in regions further away from the dielectric. Another patent details a method for reducing polysilicon depletion in a polysilicon gate electrode by employing a similar approach of varying grain size, which is beneficial in forming FETs and doped polysilicon resistors.

Career Highlights

Kevin M. Houlihan is currently employed at International Business Machines Corporation (IBM), where he continues to advance his research and development efforts in semiconductor technology. His innovative work has positioned him as a key figure in the field.

Collaborations

Throughout his career, Houlihan has collaborated with notable colleagues, including Arne Watson Ballantine and Kevin K. Chan. These partnerships have further enriched his contributions to the industry.

Conclusion

Kevin M. Houlihan's innovative work in CMOS technology and his numerous patents highlight his significant role in advancing semiconductor technology. His contributions continue to influence the field and pave the way for future innovations.