The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2002
Filed:
Oct. 14, 1998
Kevin M. Houlihan, Burlington, VT (US);
Jed H. Rankin, Burlington, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a semiconductor device, includes forming a layer of oxide on a semiconductor substrate, forming a layer of silicon nitride on the oxide layer, forming isolation regions in the substrate using the oxide layer and the nitride layer, removing the silicon nitride layer, ion implanting dopant ions using the original oxide layer as a screen, into the substrate, and removing the oxide layer and forming a gate oxide layer over the substrate. Another method of forming an active area of a semiconductor device, includes using a pad oxide, remaining after removing a film layer thereover of an oxide/film mask stack, for a screen layer for well implants formed in the substrate, removing the oxide layer and forming a gate oxide over the substrate, following defining the well implants, without using a sacrificial oxide.