Newton, MA, United States of America

Kenneth P Quinlan

This inventor holds 9 USPTO granted patents. Top assignee: United States of America as Represented by the Secretary of the Air Force. Active years: 1979-1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kenneth P Quinlan. Retrieved from https://idiyas.com/inventor/kenneth-p-quinlan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.4

ph-index = 5

Forward Citations = 69(Granted Patents)


Company Filing History:


Years Active: 1979-1998

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9 patents (USPTO):Explore Patents

Title: The Innovations of Kenneth P. Quinlan

Introduction

Kenneth P. Quinlan is a notable inventor based in Newton, MA, who has made significant contributions to the field of semiconductor technology. With a total of nine patents to his name, Quinlan's work focuses on advancing the understanding and application of photoelectrochemical etching and vapor phase epitaxy techniques.

Latest Patents

One of Quinlan's latest patents involves the photoelectrochemical etching of p-InP. This innovative process demonstrates that the semiconductor can be effectively etched in various nitric acid solutions, achieving favorable etch rates in the negative potential region. The etch rate increases as the potentials decrease to -1.0 V, with a slight decrease observed at lower potentials. Notably, the etch rates show a linear relationship with relative light intensity. For p-InP polarized at -1.0 V, the etch rates range from 0.07 to 1.24 µm/min for HNO₃ solutions with concentrations between 1.0 and 5.0 M. Furthermore, etch rates in the 4 M acid range were reproducible within 4%, while higher acid concentrations led to inconsistencies likely due to the formation of organic nitrogen compounds on the semiconductor surface.

Another significant patent by Quinlan pertains to a continuous process for forming an epitaxial layer of InGaAs using a vapor phase epitaxial-hydride technique. This method employs a pressure-controlled source of hydrogen chloride gas to maintain the gas's partial pressure over time, adapting as the amount of gallium depletes from the alloy source melt during the growth of the epitaxial layer.

Career Highlights

Quinlan's career is marked by his association with the United States of America as represented by the Secretary of the Air Force. His work has been instrumental in enhancing the capabilities of semiconductor materials and processes, contributing to advancements in various technological applications.

Collaborations

Throughout his career, Quinlan has collaborated with esteemed colleagues such as Joseph J. Hutta and Thomas E. Erstfeld. These partnerships have fostered a collaborative environment that has led to innovative solutions in semiconductor technology.

Conclusion

Kenneth P. Quinlan's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a significant inventor. His work continues to influence advancements in the

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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