The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 1988
Filed:
Nov. 03, 1986
Applicant:
Inventor:
Kenneth P Quinlan, Newton, MA (US);
Assignee:
United States of America as represented by the Secretary of the Air Force, Washington, DC (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
2502 / ; 357 30 ;
Abstract
A photodetector using a modified gate controlled diode has therein a layer of photoactive material. Photons interacting therein cause the formation of free protons which alter the electrical characteristics of the photodetector. The change in electrical characteristics is measureable and related to the intensity of photons received.
Quinlan, Kenneth. (1988). Ion sensitive photodetector (U.S. Patent No. 4720627). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4720627
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile