The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 1989
Filed:
Nov. 09, 1988
Applicant:
Inventor:
Kenneth P Quinlan, Newton, MA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 81 ; 427253 ; 156614 ; 437110 ; 437949 ;
Abstract
A continouous process of forming an epitaxial layer of InGaAs using a vapor phase epitaxial-hydride technique having a pressure controlled source of hydrogen chloride gas to maintain a partial pressure of the gas as a function of time as the amount of gallium is depleted from the alloy source melt of Ga/In during the growth of the epitaxial layer.
Quinlan, Kenneth. (1989). Vapor phase epitaxy-hydride technique with a constant alloy source for (U.S. Patent No. 4888303). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4888303
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile