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For the Inventor, By the Inventor

Atsugi, Japan

Kenichiro Makino

This inventor holds 13 USPTO granted patents and 1 EPO patent. Top assignee: Semiconductor Energy Laboratory Co., Ltd.. Active years: 2010-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kenichiro Makino. Retrieved from https://idiyas.com/inventor/kenichiro-makino

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13

% Patents Active = 15.4


Average Co-Inventor Count = 3.0

ph-index = 4

Forward Citations = 48(Granted Patents)


Location History:

  • Kanagawa, JP (2011)
  • Atsugi, JP (2010 - 2014)

Company Filing History:

goldMedal13 out of 16,652 
 
Semiconductor Energy Laboratory Co., Ltd.
 patents

Years Active: 2010-2025

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13 patents (USPTO):Explore Patents
1. 12278291 - Thin film transistor array having a stacked multi-layer metal oxide channel formation region (2025-04-14),
2. 8884371 - SOI substrate and manufacturing method thereof (2014-11-11),
3. 8633542 - SOI substrate and manufacturing method thereof (2014-01-21),
4. 8598013 - Method for manufacturing SOI substrate and semiconductor device (2013-12-03),
5. 8361873 - Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device (2013-01-29),
6. 8273637 - Method for manufacturing semiconductor device (2012-09-25),
7. 8198173 - Method for manufacturing SOI substrate (2012-06-12),
8. 8048773 - Method for manufacturing SOI substrate (2011-11-01),
9. 8030169 - SOI substrate and manufacturing method thereof (2011-10-04),
10. 7943487 - Method for manufacturing semiconductor device (2011-05-17),
11. 7829432 - Method for manufacturing SOI substrate (2010-11-09),
12. 7727846 - Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device (2010-06-01),
13. 7678668 - Manufacturing method of SOI substrate and manufacturing method of semiconductor device (2010-03-16),

Title: Kenichiro Makino: Innovator in Semiconductor Technology

Introduction

Kenichiro Makino is a prominent inventor based in Atsugi, Japan, known for his significant contributions to the field of semiconductor technology. With a total of 13 patents to his name, Makino has made remarkable advancements that enhance the performance and reliability of semiconductor devices.

Latest Patents

Among his latest patents is a thin film transistor array featuring a stacked multi-layer metal oxide channel formation region. This innovative semiconductor device is designed to provide favorable electrical characteristics. It includes a plurality of transistors, each comprising various layers such as insulators, oxides, and conductors, strategically arranged to optimize performance. Another notable patent involves a silicon-on-insulator (SOI) substrate and its manufacturing method. This invention aims to create a practical SOI substrate using a glass base, enhancing the reliability of semiconductor devices.

Career Highlights

Kenichiro Makino is associated with Semiconductor Energy Laboratory Co., Ltd., where he has been instrumental in developing cutting-edge semiconductor technologies. His work has significantly impacted the industry, leading to advancements that improve device efficiency and reliability.

Collaborations

Makino has collaborated with esteemed colleagues, including Hideto Ohnuma and Yoichi Iikubo, contributing to various projects that push the boundaries of semiconductor research and development.

Conclusion

Kenichiro Makino's innovative spirit and dedication to semiconductor technology have established him as a key figure in the field. His patents reflect a commitment to enhancing the performance and reliability of semiconductor devices, making a lasting impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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