The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Oct. 22, 2010
Hideto Ohnuma, Atsugi, JP;
Kenichiro Makino, Atsugi, JP;
Yoichi Iikubo, Machida, JP;
Masaharu Nagai, Atsugi, JP;
Aiko Shiga, Atsugi, JP;
Hideto Ohnuma, Atsugi, JP;
Kenichiro Makino, Atsugi, JP;
Yoichi Iikubo, Machida, JP;
Masaharu Nagai, Atsugi, JP;
Aiko Shiga, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.