The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Jun. 17, 2008
Akihisa Shimomura, Isehara, JP;
Hideto Ohnuma, Atsugi, JP;
Tetsuya Kakehata, Isehara, JP;
Kenichiro Makino, Atsugi, JP;
Akihisa Shimomura, Isehara, JP;
Hideto Ohnuma, Atsugi, JP;
Tetsuya Kakehata, Isehara, JP;
Kenichiro Makino, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
It is object to provide a manufacturing method of an SOI substrate provided with a single-crystal semiconductor layer, even in the case where a substrate having a low allowable temperature limit, such as a glass substrate, is used and to manufacture a high-performance semiconductor device using such an SOI substrate. Light irradiation is performed on a semiconductor layer which is separated from a semiconductor substrate and bonded to a support substrate having an insulating surface, using light having a wavelength of 365 nm or more and 700 nm or less, and a film thickness d (nm) of the semiconductor layer which is irradiated with the light is made to satisfy d=λ/2n×m±α (nm), when a light wavelength is λ (nm), a refractive index of the semiconductor layer is n, m is a natural number greater than or equal to 1 (m=1, 2, 3, 4, . . . ), and 0≦α≦10 is satisfied.