The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Mar. 23, 2010
Shunpei Yamazaki, Tokyo, JP;
Masaki Koyama, Kanagawa, JP;
Kosei Noda, Kanagawa, JP;
Kenichiro Makino, Kanagawa, JP;
Hideto Ohnuma, Kanagawa, JP;
Kosei Nei, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Masaki Koyama, Kanagawa, JP;
Kosei Noda, Kanagawa, JP;
Kenichiro Makino, Kanagawa, JP;
Hideto Ohnuma, Kanagawa, JP;
Kosei Nei, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A single crystal semiconductor separated from a single crystal semiconductor substrate is formed partly over a supporting substrate with a buffer layer provided therebetween. The single crystal semiconductor is separated from the single crystal semiconductor substrate by irradiation with accelerated ions, formation of a fragile layer by the ion irradiation, and heat treatment. A non-single crystal semiconductor layer is formed over the single crystal semiconductor and irradiated with a laser beam to be crystallized, whereby an SOI substrate is manufactured.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile