Tokyo, Japan

Kenichiro Kurahashi

This inventor holds 5 USPTO granted patents and 2 published patent applications. Top assignee: Mitsubishi Electric Corporation. Active years: 2013-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kenichiro Kurahashi. Retrieved from https://idiyas.com/inventor/kenichiro-kurahashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 5 

% Patents Active = 100.0

Average Co-Inventor Count = 4.4

ph-index = 2

Forward Citations = 15(Granted Patents)


Location History:

  • Tokyo, JP (2013 - 2018)
  • Chiyoda-ku, JP (2021)

Company Filing History:


Years Active: 2013-2021

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5 patents (USPTO):Explore Patents

Title: **Innovator Spotlight: Kenichiro Kurahashi**

Introduction

Kenichiro Kurahashi, based in Tokyo, Japan, is a notable inventor with a significant contribution to the field of semiconductor technology. Holding five patents, his innovations are integral to advancing manufacturing methods within the electronics sector.

Latest Patents

Kurahashi's recent patents showcase his expertise in semiconductor manufacturing:

1. **Semiconductor Manufacturing Method and Semiconductor Manufacturing Device**: This patent describes a sophisticated device that includes a lower substrate support base designed to support a diamond substrate, and an upper substrate support base for a semiconductor substrate. It also features a support base drive unit that moves both substrates into close contact under pressure, enhancing the fabrication process. Additionally, it incorporates a mechanism to deform the upper substrate surface, ensuring that the semiconductor substrate remains parallel to the diamond substrate, thus optimizing the manufacturing accuracy.

2. **Semiconductor Device and Method of Manufacturing the Same**: This patent details a semiconductor device comprising a substrate with a nitride semiconductor layer. It includes source, drain, and gate electrodes, along with a SiN surface protective film. Notably, the film’s composition ratio of silicon to nitrogen, forming the Si-N bond, is precisely defined to improve the device's efficiency.

Career Highlights

Kenichiro Kurahashi is employed by Mitsubishi Electric Corporation, where he utilizes his expertise to drive innovations in semiconductor technology. His work has played a crucial role in developing efficient manufacturing processes, thus impacting the broader electronics industry.

Collaborations

Throughout his career, Kurahashi has collaborated with talented professionals, including Hiroyuki Okazaki and Hidetoshi Koyama. These partnerships have enhanced the creative process and led to the successful development of groundbreaking technologies.

Conclusion

Kenichiro Kurahashi stands out as an influential figure in the semiconductor field. His innovative patents pave the way for advancements in manufacturing methods, helping to secure a brighter future for semiconductor technology. As he continues his work at Mitsubishi Electric Corporation, his contributions will undoubtedly shape the industry's landscape for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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