The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Jun. 06, 2016
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Kenichiro Kurahashi, Tokyo, JP;
Takuma Nanjo, Tokyo, JP;
Muneyoshi Suita, Tokyo, JP;
Akifumi Imai, Tokyo, JP;
Eiji Yagyu, Tokyo, JP;
Hiroyuki Okazaki, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/812 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/80 (2006.01); H01L 23/29 (2006.01); H01L 29/51 (2006.01); H01L 29/778 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/812 (2013.01); H01L 23/291 (2013.01); H01L 29/0649 (2013.01); H01L 29/402 (2013.01); H01L 29/408 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/802 (2013.01); H01L 29/42376 (2013.01);
Abstract
A semiconductor device includes: a substrate; a nitride semiconductor layer on the substrate; a source electrode, a drain electrode and a gate electrode on the nitride semiconductor layer; and a SiN surface protective film covering the nitride semiconductor layer, wherein a composition ratio Si/N of Si and N that form a Si—N bond of the SiN surface protective film is 0.751 to 0.801.