The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
May. 03, 2016
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Hiroyuki Okazaki, Tokyo, JP;
Kenichiro Kurahashi, Tokyo, JP;
Hidetoshi Koyama, Tokyo, JP;
Toshiaki Kitano, Tokyo, JP;
Yoshitaka Kamo, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/47 (2006.01); H01L 29/40 (2006.01); H01L 21/04 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 29/402 (2013.01); H01L 29/475 (2013.01); H01L 29/66462 (2013.01); H01L 21/0495 (2013.01); H01L 21/28581 (2013.01); H01L 29/0891 (2013.01);
Abstract
A semiconductor device includes: a substrate; a nitride semiconductor film on the substrate; a schottky electrode on the nitride semiconductor film; a first insulating film on the nitride semiconductor film, contacting at least part of a side surface of the schottky electrode, forming an interface with the nitride semiconductor film and formed of SiN; and a second insulating film covering the schottky electrode and the first insulating film and formed of AlO whose atomic layers are alternately disposed.