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For the Inventor, By the Inventor

San Diego, CA, United States of America

Kendrick H Yuen

This inventor holds 10 USPTO granted patents and 1 published patent application and 2 EPO patents. Top assignee: Qualcomm Incorporated. Active years: 1998-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kendrick H Yuen. Retrieved from https://idiyas.com/inventor/kendrick-h-yuen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10 

% Patents Active = 20.0

 

Average Co-Inventor Count = 6.3

ph-index = 4

Forward Citations = 122(Granted Patents)


Company Filing History:

goldMedal10 out of 44,831 
 
Qualcomm Incorporated
 patents

Years Active: 1998-2017

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10 patents (USPTO):Explore Patents
1. 9799824 - STT-MRAM design enhanced by switching current induced magnetic field (2017-10-24),
2. 9385305 - STT-MRAM design enhanced by switching current induced magnetic field (2016-07-05),
3. 9164729 - Method and apparatus for generating random numbers using a physical entropy source (2015-10-20),
4. 9147454 - Magnetic tunneling junction non-volatile register with feedback for robust read and write operations (2015-09-29),
5. 9110746 - Magnetic tunnel junction based random number generator (2015-08-18),
6. 9053071 - Spin torque transfer magnetic tunnel junction intelligent sensing (2015-06-09),
7. 8804413 - Multi-free layer MTJ and multi-terminal read circuit with concurrent and differential sensing (2014-08-12),
8. 8779824 - Clock distribution using MTJ sensing (2014-07-15),
9. 8625337 - Method and apparatus of probabilistic programming multi-level memory in cluster states of bi-stable elements (2014-01-07),
10. 5854786 - Method and apparatus for distribution/consolidation (DISCO) interface (1998-12-29),

Title: Innovation Spotlight: Kendrick H Yuen - Pioneering STT-MRAM Technology

Introduction:

Kendrick H Yuen, a prolific inventor based in San Diego, CA, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 10 patents, Kendrick is at the forefront of advancing memory cell design for enhanced performance.

Latest Patents:

Kendrick's latest patents focus on STT-MRAM design enhanced by a switching current-induced magnetic field. These innovative memory cells feature elongated electrodes that optimize the direction of the switching current-induced magnetic field, resulting in improved switching efficiency and reliability.

Career Highlights:

Currently employed at Qualcomm Incorporated, Kendrick H Yuen continues to drive innovation in the semiconductor industry. His expertise and dedication have led to the development of cutting-edge technologies that push the boundaries of what is possible in memory storage and data processing.

Collaborations:

In his pursuit of groundbreaking inventions, Kendrick has collaborated closely with industry peers such as Wenqing Wu and Seung Hyuk Kang. Together, they have synergized their skills and knowledge to tackle complex challenges and bring disruptive technologies to the market.

Conclusion:

Kendrick H Yuen's groundbreaking work in STT-MRAM technology exemplifies his commitment to innovation and excellence in the field of semiconductors. As he continues to push the boundaries of what is possible, Kendrick stands as a true pioneer in the world of memory cell design. His contributions have not only transformed the industry but have also paved the way for future advancements in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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