The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
Mar. 11, 2013
Magnetic tunneling junction non-volatile register with feedback for robust read and write operations
Qualcomm Incorporated, San Diego, CA (US);
Zhenyu Sun, New York, NY (US);
Raghu Sagar Madala, San Diego, CA (US);
Senthil Kumar Govindaswamy, San Diego, CA (US);
Kendrick H. Yuen, San Diego, CA (US);
Wenqing Wu, San Diego, CA (US);
Peiyuan Wang, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A magnetic tunneling junction non-volatile register with feedback for robust read and write operations. In an embodiment, two MTJ devices are configured to store a logical 0 or a logical 1, and are coupled to drive an output node to a voltage indicative of the stored logical 0 or a logical 1. The output of a D flip-flop is fed to the two MTJ devices so that the state of the D flip-flop may be stored in the two MTJ devices during a store operation. During a read operation, the D flip-flop outputs the state of the two MTJ devices. Read disturbances are mitigated with the use of an edge detector coupled to the output node, so that a LOW voltage is provided to the D flip-flop if a rising voltage at the output node is detected.