The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Jun. 01, 2016
Qualcomm Incorporated, San Diego, CA (US);
William H. Xia, San Diego, CA (US);
Wenqing Wu, San Diego, CA (US);
Kendrick H. Yuen, San Diego, CA (US);
Abhishek Banerjee, Kanpur, IN;
Xia Li, San Diego, CA (US);
Seung H. Kang, San Diego, CA (US);
Jung Pill Kim, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.