Richardson, TX, United States of America

Keith Alan Joyner

This inventor holds 28 USPTO granted patents, primarily in Semiconductor Technology. Top assignees: Texas Instruments Corporation, Other. Active years: 1985-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Keith Alan Joyner. Retrieved from https://idiyas.com/inventor/keith-alan-joyner

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 28

% Patents Active = 100.0

Average Co-Inventor Count = 1.6

ph-index = 13

Forward Citations = 605(Granted Patents)

Location History:

Dallas, TX (US) (1999 - 2008)
Richardson, TX (US) (1985 - 2023)

Company Filing History:

27 out of 29,869

Texas Instruments Corporation

patents

1 out of 834,453

Other

patents

Years Active: 1985-2023

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Areas of Expertise:

Transistor Manufacturing

Silicon-On-Insulator

Isolation Structures

Porous Silicon

Gate Spacing

Dopant Distribution

Temperature Control

Lateral-Current-Flow

Stress Induction

Electrical Interconnection

Trench Isolation

Active Region

28 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11570957 - Adjustable, controlled rate plant watering device (2023-02-07),

2. 7459734 - Method for manufacturing and structure for transistors with reduced gate to contact spacing (2008-12-02),

3. 7339214 - Methods and apparatus for inducing stress in a semiconductor device (2008-03-04),

4. 7101772 - Means for forming SOI (2006-09-05),

5. 6806151 - Methods and apparatus for inducing stress in a semiconductor device (2004-10-19),

6. 6767777 - Method for manufacturing and structure for transistors with reduced gate to contact spacing including etching to thin the spacers (2004-07-27),

7. 6737347 - Semiconductor device with fully self-aligned local interconnects, and method for fabricating the device (2004-05-18),

8. 6376859 - Variable porosity porous silicon isolation (2002-04-23),

9. 6376285 - Annealed porous silicon with epitaxial layer for SOI (2002-04-23),

10. 6228747 - Organic sidewall spacers used with resist (2001-05-08),

11. 6214699 - Method for forming an isolation structure in a substrate (2001-04-10),

12. 6207511 - Self-aligned trenched-channel lateral-current-flow transistor (2001-03-27),

13. 6180491 - Isolation structure and method (2001-01-30),

14. 6171969 - Uniform dopant distribution for mesas of semiconductors (2001-01-09),

15. 6118161 - Self-aligned trenched-channel lateral-current-flow transistor (2000-09-12),

Title: The Innovative Journey of Keith Alan Joyner

Introduction: Keith Alan Joyner, a talented inventor hailing from Richardson, Texas, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Keith Alan Joyner's latest patents showcase his prowess in the field of technology, with a focus on advancements in artificial intelligence, renewable energy, and sustainable materials.

Career Highlights: With a career spanning over two decades, Keith Alan Joyner has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing innovative solutions. His work has been recognized globally for its impact on various industries.

Collaborations: Throughout his career, Keith Alan Joyner has collaborated with leading tech companies, research institutions, and universities to bring his inventions to life. His ability to work in multidisciplinary teams has led to the successful implementation of cutting-edge technologies.

Conclusion: Keith Alan Joyner's passion for innovation and his dedication to pushing the boundaries of technology have solidified his position as a respected inventor in the industry. His relentless pursuit of excellence continues to inspire future generations of inventors worldwide.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]