The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
Jul. 01, 1999
Applicant:
Inventors:
Leland S. Swanson, McKinney, TX (US);
Keith A. Joyner, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/904 ;
U.S. Cl.
CPC ...
H01L 2/904 ;
Abstract
Varying the porosity through the thickness of a porous silicon layer allows conflicting needs to be met by the same layer: a low porosity surface layer allows a high-quality epitaxial layer of silicon to be grown, or can provide structural support, while greater porosity in other portions of the layer increases circuit isolation and provides stress relief between layers.