Higashimurayama, Japan

Katsuya Miura

This inventor holds 24 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Magnetic Memory Technology. Top assignees: Tohoku University, Hitachi, Ltd., Hitachi High-Tech Corporation. Active years: 2009-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Katsuya Miura. Retrieved from https://idiyas.com/inventor/katsuya-miura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24 

% Patents Active = 79.2

 

Average Co-Inventor Count = 3.6

ph-index = 4

Forward Citations = 44(Granted Patents)


Location History:

  • Kokubunji, JP (2009)
  • Sendai, JP (2010 - 2015)
  • Higashimurayama, JP (2014 - 2020)
  • Tokyo, JP (2015 - 2023)

Company Filing History:


Years Active: 2009-2026

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Areas of Expertise:
Magnetic Tunnel Junction
Magnetoresistive Element
Spin Torque Memory
Temperature Sensor
Magnetoresistance Effect
Magnetic Memory
Flow Sensor
Magnetic Recording
Microstructure Processing
Logic Circuit
Memory Cell
Spin Wave Device
24 patents (USPTO):Explore Patents

Title: Innovations in Magnetic Tunnel Junctions by Katsuya Miura

Introduction

Katsuya Miura, based in Higashimurayama, Japan, is an accomplished inventor known for his significant contributions to the field of magnetic tunnel junction technology. With a remarkable portfolio comprising 21 patents, Miura's work has paved the way for advancements in magnetic materials and structures.

Latest Patents

Among his latest innovations is a groundbreaking method of manufacturing a magnetic tunnel junction. This method not only addresses the removal of oxides on the sides of the magnetic layer but also facilitates the formation of a protective film, thereby preventing the deterioration of magnetic characteristics. The process consists of two major steps: the first involves etching a stacked film composed of a first magnetic layer, a MgO barrier layer, and a second magnetic layer using plasma etching with an oxidizing gas. The second step introduces an organic acid gas, an n-valent acid, alongside a precursor gas to create a protective film on the side walls of the magnetic tunnel junction. This meticulous approach ensures that the precursor gas is introduced at a molar ratio of n/m or more with respect to the organic acid gas, enhancing the overall performance of the junction.

Career Highlights

Katsuya Miura has achieved significant milestones in his career, notably in his roles at prestigious institutions. He has been affiliated with Tohoku University and Hitachi, Ltd., where he has been able to apply his innovative ideas and collaborate with leading experts in the field.

Collaborations

Throughout his career, Miura has worked alongside notable colleagues, including Hideo Ohno and Shoji Ikeda. These collaborations have fostered an environment of innovation and have contributed to the advancement of magnetic tunnel junction technologies.

Conclusion

Katsuya Miura's contributions to the invention and development of magnetic tunnel junctions have made a significant impact on the field of magnetics. His innovative methods and collaborative efforts continue to inspire future advancements in technology, solidifying his reputation as a leading figure in the realm of electrical engineering and magnetics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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