The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Feb. 14, 2011
Hideo Ohno, Sendai, JP;
Shoji Ikeda, Sendai, JP;
Fumihiro Matsukura, Sendai, JP;
Masaki Endoh, Sendai, JP;
Shun Kanai, Sendai, JP;
Katsuya Miura, Higashimurayama, JP;
Hiroyuki Yamamoto, Shiki, JP;
Hideo Ohno, Sendai, JP;
Shoji Ikeda, Sendai, JP;
Fumihiro Matsukura, Sendai, JP;
Masaki Endoh, Sendai, JP;
Shun Kanai, Sendai, JP;
Katsuya Miura, Higashimurayama, JP;
Hiroyuki Yamamoto, Shiki, JP;
TOHOKU UNIVERSITY, Sendai-Shi, Miyagi, JP;
Abstract
There is provided a magnetoresistive element whose magnetization direction is stable in a direction perpendicular to the film surface and whose magnetoresistance ratio is controlled, as well as magnetic memory using such a magnetoresistive element. By having the material of a ferromagnetic layer forming the magnetoresistive element comprise a ferromagnetic material containing at least one type of 3d transition metal, or a Heusler alloy, to control the magnetoresistance ratio, and by controlling the thickness of the ferromagnetic layer on an atomic layer level, the magnetization direction is changed from being in-plane with the film surface to being perpendicular to the film surface.