Tohoku University

Hitachi, Ltd.

Hitachi High-tech Corporation

Koa Corporation

Tdk Corporation

Katsuya Miura

Hideo Ohno

Shoji Ikeda

Hiroyuki Yamamoto

Fumihiro Matsukura

Shun Kanai

Masaki Endoh

Masaki Yamada

Kenchi Ito

Hirotaka Hamamura

Jun Hayakawa

Yu Zhao

Kiyohiko Sato

Hiromasa Takahashi

Masahiro Shimodaira

Riichiro Takemura

Keiji Watanabe

Nobuyuki Sugii

Shuntaro Machida

Susumu Ogawa

Daisuke Ryuzaki

Hideo Sato

Kazuo Ono

Akihiro Masuda

Tetsufumi Kawamura

Yosuke Kurosaki

Michihiko Yamanouchi

Ryusuke Suzuki

Aki Takei

Takumi Ashikawa

Natsuki Kumagai

An electronic device comprises chip components aligned along a predetermined first direction and including respective terminal electrodes, and a metal block including an electrode-opposing surface and a mounting surface. The electrode-opposing surface is opposed and connected to the respective terminal electrodes of the chip components continuously along the first direction. The mounting surface is substantially perpendicular to the electrode-opposing surface and is substantially parallel to the first direction to oppose a land pattern when the electronic device is mounted on the land pattern.

Electronic device

An object is to provide a flow sensor element is non-directional and has an excellent sensor sensitivity. A flow sensor element includes a base body having a spherical shape, and a temperature-sensitive film pattern that is disposed over the entirety of a surface of the base body, and changes in an electrical resistance value due to a change in temperature. It is preferable that the temperature-sensitive film pattern be formed by trimming a temperature-sensitive film that has been formed on the surface of the base body. In the flow sensor element, the temperature-sensitive film pattern can be disposed over the entirety of the surface of the base body having a spherical shape. This enables a constant sensor sensitivity to be obtained regardless of a direction of a fluid, and the accuracy of detection of a flow rate can be improved.

Flow sensor element

Provided is a method of manufacturing a magnetic tunnel junction that simultaneously realizes removal of oxides on side walls of a magnetic layer and formation of a protective film and prevents deterioration of magnetic characteristics. The method includes: a first stepof etching a stacked film including a first magnetic layer, a MgO barrier layer, and a second magnetic layer stacked in order by plasma etching using an oxidizing gas to form the magnetic tunnel junction; and a second stepof simultaneously introducing an organic acid gas which is an n-valent acid and a precursor gas having a corresponding metal element valence of m, to form a first protective film on side walls of the magnetic tunnel junction. In the second step, the precursor gas is introduced at a molar ratio of n/m or more with respect to 1 mole of the organic acid gas introduced.

Method of manufacturing magnetic tunnel junction and magnetic tunnel junction

A magnetic tunnel junction device includes a first ferromagnetic layer, a tunnel barrier that is in contact with the first ferromagnetic layer, and a synthetic ferrimagnetic reference layer that is in contact with the tunnel barrier while being in the other side of the first ferromagnetic layer, in which the synthetic ferrimagnetic reference layer includes a second ferromagnetic layer that has a first magnetization direction while being in contact with the tunnel barrier, a magnetic layer that has a second magnetization direction which is anti-parallel to the first magnetization direction, and a first nonmagnetic layer that is interposed between the second ferromagnetic layer and the magnetic layer, and lateral dimensions of the magnetic layer of the synthetic ferrimagnetic reference layer are made larger than lateral dimensions of the first ferromagnetic layer and the second ferromagnetic layer.

Magnetic tunnel junction device, magnetoresistive random access memory using same and manufacturing method of magnetic tunnel junction device

To provide a magnetic tunnel junction (MTJ) element that is adapted to suppress the degradation of magnetic properties of a magnetic tunnel junction layer due to plasma CVD layer formation and adapted for miniaturization. The MTJ element includes a magnetic tunnel junction layer () and a plurality of passivation layers formed on a side wall of the magnetic tunnel junction layer. The plurality of passivation layers are SiN layers formed under different plasma CVD layer forming conditions and include a first passivation layerformed in direct contact with the magnetic tunnel junction layer. A hydrogen ion density or hydrogen ion energy of a layer forming condition for the first passivation layer is lower than a hydrogen ion density or hydrogen ion energy of a layer forming condition for the other of the plural passivation layers. The other passivation layers include a passivation layer, a nitrogen density of which is higher than a nitrogen density of the first passivation layer.

Magnetic tunnel junction element, magnetic memory using the same, and manufacture method of magnetic tunnel junction element

A resistance pattern that contains platinum as a main component is formed into a meander shape and on a main surface of a ceramic substrate. A protective film layer that covers the resistance pattern has a two-layer structure including a trap layer as an inner layer and an overcoat layer as an outer layer. The trap layer contains alumina as a main component and 2 to 30 vol % of platinum. The overcoat layer contains alumina as a main component. With such a configuration, even when reactivity of the platinum resistance pattern becomes higher under high temperature use, platinum contained in the trap layer reacts with oxygen or impurities etc. contained in the ceramic substrate. Thus, reaction of the platinum resistance pattern can be suppressed.

Temperature sensor element

A magnetoresistive element includes a reference layer having a fixed magnetization direction and including a ferromagnetic material containing Fe or Co, a recording layer having a variable magnetization direction and including a ferromagnetic material, and one non-magnetic layer that is formed between the reference layer and the recording layer and that contains oxygen. One of the reference layer and the recording layer contains Fe. The three layers are arranged so that a magnetization direction of the one of the reference layer and the recording layer becomes perpendicular to a layer surface by an interfacial perpendicular magnetic anisotropy at an interface between the one of the reference layer and the recording layer and the one non-magnetic layer resulting from the one of the reference layer and the recording layer having a predetermined thickness. The one of the reference layer and the recording layer has a bcc structure.

Magnetoresistive element and magnetic memory

Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.

A temperature sensor element has such a structure as, when reinforcing lead wires on internal electrodes with a paste, one side surface of each of the lead wires is covered with a reinforcement paste and the other side surface is not covered with the reinforcement paste without covering the entire lead wires welded and connected to the internal electrodes. This allows elimination of cause of cracks generating, thereby securing sufficient joining strength and reinforcement of conductivity of the internal electrodes and the lead wires, and securing connection strength between the lead wires and the internal electrodes.

Platinum temperature sensor element

First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.

Microstructure processing method and microstructure processing apparatus

As a technique for attaining a reduction in power consumption, there is a technique for reducing power consumption using a spin wave. No specific proposal concerning spin wave generation, spin wave detection, and a latch technique for information has been made. A device applies an electric field to a first electrode of a nonmagnetic material using a thin line-shaped stacked body including a first ferromagnetic layer and a nonmagnetic layer to thereby generate a spin wave in the first ferromagnetic layer, and detects a phase or amplitude of the spin wave propagated in the first ferromagnetic layer using a second electrode of a ferromagnetic material with a magnetoresistance effect.

Spin wave device and logic circuit using spin wave device

Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layersandof the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.

Magnetoresistance effect element and magnetic memory

There is provided a magnetoresistive element whose magnetization direction is stable in a direction perpendicular to the film surface and whose magnetoresistance ratio is controlled, as well as magnetic memory using such a magnetoresistive element. By having the material of a ferromagnetic layer forming the magnetoresistive element comprise a ferromagnetic material containing at least one type of 3d transition metal, or a Heusler alloy, to control the magnetoresistance ratio, and by controlling the thickness of the ferromagnetic layer on an atomic layer level, the magnetization direction is changed from being in-plane with the film surface to being perpendicular to the film surface.

Provided is a tunnel magnetoresistive effect element such that a high TMR ratio and a low write current can be realized, and the thermal stability factor (E/kT) of a recording layer and a pinned layer is increased while an increase in resistance of the element as a whole is suppressed, thus enabling a stable operation. On at least one of a recording layerand a pinned layereach comprising CoFeB, electrically conductive oxide layersandare disposed on a side opposite to a tunnel barrier layer

Growing community of inventors

Higashimurayama, Japan

Katsuya Miura