The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Dec. 28, 2016
Tohoku University, Sendai-shi, Miyagi, JP;
Hideo Ohno, Sendai, JP;
Shoji Ikeda, Sendai, JP;
Fumihiro Matsukura, Sendai, JP;
Masaki Endoh, Sendai, JP;
Shun Kanai, Sendai, JP;
Hiroyuki Yamamoto, Shiki, JP;
Katsuya Miura, Higashimurayama, JP;
TOHOKU UNIVERSITY, Sendai-Shi, Miyagi, JP;
Abstract
Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.