Katsuhiro Sato

Title: Katsuhiro Sato: Innovator in Semiconductor Technology

Introduction

Katsuhiro Sato, an accomplished inventor based in Kawasaki, Japan, has made significant contributions to the field of semiconductor technology. With a total of seven patents to his name, Sato's work has advanced the capabilities and performance of ferroelectric memory devices in notable ways.

Latest Patents

Among his latest patents is a semiconductor device suitable for a ferroelectric memory and its manufacturing method. This innovation involves the formation of an aluminum wiring (conductive pad) connected to a ferroelectric capacitor. Subsequently, silicon oxide and silicon nitride films are created around the Al wiring, followed by the formation of an aluminum oxide film which acts as a moisture penetration inhibiting layer.

Another significant patent detailed a semiconductor device and method of fabrication, where a protective film with water and hydrogen blocking functions is utilized. This protective film, covering the periphery of a pad electrode, consists of materials like palladium, iridium, or iridium oxide. This configuration provides an FeRAM solution capable of reliably preventing moisture intrusion while maintaining high performance in ferroelectric capacitor structures.

Career Highlights

Throughout his career, Katsuhiro Sato has contributed significantly while working with leading companies such as Fuji Electric Co., Ltd. and Fujitsu Semiconductor Limited. His work has been pivotal in advancing the fields of semiconductor manufacturing and ferroelectric memory technologies, demonstrating his expertise and commitment to innovation.

Collaborations

Sato has collaborated with a number of talented individuals during his career. Notable coworkers include Sumitaka Nogami and Michihiro Kitazawa, both of whom have contributed to the advancements in semiconductor technology alongside him, further enhancing the field with their shared insights and creativity.

Conclusion

Katsuhiro Sato stands out in the realm of semiconductor innovation, with his latest patents showcasing his dedication to enhancing the performance and reliability of ferroelectric memory devices. His collaborations and work history underscore his importance in the industry, making him a key figure to watch as technology continues to evolve.