The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Jan. 03, 2008
Kouichi Nagai, Kawasaki, JP;
Katsuhiro Sato, Kawasaki, JP;
Kaoru Sugawara, Kawasaki, JP;
Makoto Takahashi, Kawasaki, JP;
Masahito Kudou, Kawasaki, JP;
Kazuhiro Asai, Kawasaki, JP;
Yukimasa Miyazaki, Kawasaki, JP;
Kaoru Saigoh, Kawasaki, JP;
Kouichi Nagai, Kawasaki, JP;
Katsuhiro Sato, Kawasaki, JP;
Kaoru Sugawara, Kawasaki, JP;
Makoto Takahashi, Kawasaki, JP;
Masahito Kudou, Kawasaki, JP;
Kazuhiro Asai, Kawasaki, JP;
Yukimasa Miyazaki, Kawasaki, JP;
Kaoru Saigoh, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A protective film () having a water/hydrogen blocking function is formed so as to cover the periphery of a pad electrode () while being electrically isolated from the pad electrode. A material selected in the embodiment for composing the protective film is a highly moisture-proof material having a water/hydrogen blocking function considerably superior to that of the insulating material, such as palladium (Pd) or palladium-containing material, and iridium (Ir) or iridium oxide (IrO: typically x=2) or an iridium- or iridium oxide-containing material. An FeRAM capable of reliably preventing water/hydrogen from entering inside, and of maintaining high performance of the ferroelectric capacitor structure () may be realized only by a simple configuration.