Kawasaki, Japan

Kaoru Sugawara


Average Co-Inventor Count = 8.5

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2011-2013

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2 patents (USPTO):

Title: Kaoru Sugawara: Innovator in Semiconductor Technology

Introduction

Kaoru Sugawara is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of devices suitable for ferroelectric memory. With a total of 2 patents to his name, Sugawara's work has had a notable impact on the industry.

Latest Patents

Sugawara's latest patents include a semiconductor device suitable for a ferroelectric memory and a manufacturing method of the same. This invention involves the formation of a ferroelectric capacitor, followed by the creation of an aluminum wiring connected to the capacitor. A silicon oxide film and a silicon nitride film are then formed around the aluminum wiring. To inhibit moisture penetration into the silicon oxide film, an aluminum oxide film is applied. His other patent focuses on a semiconductor device and method of fabricating the same, which includes a protective film that has a water/hydrogen blocking function. This protective film is designed to cover the periphery of a pad electrode while remaining electrically isolated from it. The materials used for this protective film, such as palladium and iridium, significantly enhance moisture resistance, ensuring the high performance of the ferroelectric capacitor structure.

Career Highlights

Kaoru Sugawara is currently employed at Fujitsu Semiconductor Limited, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of ferroelectric memory devices.

Collaborations

Sugawara has collaborated with notable colleagues, including Kouichi Nagai and Makoto Takahashi, contributing to the development of cutting-edge semiconductor technologies.

Conclusion

Kaoru Sugawara's contributions to semiconductor technology, particularly in ferroelectric memory devices, highlight his role as a key innovator in the field. His patents reflect a commitment to advancing technology and improving device performance.

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