Fujitsu Semiconductor Limited

Kaoru Sugawara

Kouichi Nagai

Kazuhiro Asai

Makoto Takahashi

Kaoru Saigoh

Katsuhiro Sato

Yukimasa Miyazaki

Hitoshi Saito

Masahito Kudou

Masahito Kudo

After a ferroelectric capacitor is formed, an Al wiring (conductive pad) connected to the ferroelectric capacitor is formed. Then, a silicon oxide film and a silicon nitride film are formed around the Al wiring. Thereafter, as a penetration inhibiting film which inhibits penetration of moisture into the silicon oxide film, an AlOfilm is formed.

Semiconductor device suitable for a ferroelectric memory and manufacturing method of the same

A protective film () having a water/hydrogen blocking function is formed so as to cover the periphery of a pad electrode () while being electrically isolated from the pad electrode. A material selected in the embodiment for composing the protective film is a highly moisture-proof material having a water/hydrogen blocking function considerably superior to that of the insulating material, such as palladium (Pd) or palladium-containing material, and iridium (Ir) or iridium oxide (IrO: typically x=2) or an iridium- or iridium oxide-containing material. An FeRAM capable of reliably preventing water/hydrogen from entering inside, and of maintaining high performance of the ferroelectric capacitor structure () may be realized only by a simple configuration.

Semiconductor device and method of fabricating the same

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Kawasaki, Japan

Kaoru Sugawara