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For the Inventor, By the Inventor

Tokyo, Japan

Kanji Oishi

This inventor holds 40 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Devices. Top assignees: Elpida Memory, Inc., Hitachi, Ltd., Hitachi Vlsi Engineering Corp.. Active years: 1986-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kanji Oishi. Retrieved from https://idiyas.com/inventor/kanji-oishi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 40 

% Patents Active = 62.5

Average Co-Inventor Count = 2.4

ph-index = 12

Forward Citations = 599(Granted Patents)


Location History:

  • Koganei, JP (1986 - 2004)
  • Tokyo, JP (1993 - 2013)

Company Filing History:

goldMedal20 out of 1,458 
 
Elpida Memory, Inc.
 patents
silverMedal19 out of 42,731 
 
Hitachi, Ltd.
 patents
bronzeMedal5 out of 182 
 
Hitachi Vlsi Engineering Corp.
 patents
4. 1 out of 217 
 
Hitachi Device Engineering Co., Ltd.
 patents
5. 1 out of 87 
 
Hitachi Ulsi Engineering Corp.
 patents
6. 1 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 1986-2013

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Areas of Expertise:
Voltage Level Shift Circuit
Semiconductor Memory Device
Data Inversion Circuit
Fuse Circuit
Duty Detection Circuit
Synchronous Dynamic Memory
Redundancy Means
Clock Delay Circuit
Static Memory
Cache System
Noise Suppression
Integrated Circuit Device
40 patents (USPTO):Explore Patents
1. 8436655 - Voltage level shift circuit and semiconductor device (2013-05-07),
2. 8400855 - Semiconductor device (2013-03-19),
3. 8130565 - Semiconductor device (2012-03-06),
4. 8054699 - Semiconductor memory device having a double branching bidirectional buffer (2011-11-08),
5. 7913126 - Semiconductor memory device and method of testing same (2011-03-22),
6. 7859933 - Semiconductor memory device and operating method thereof (2010-12-28),
7. 7808848 - Semiconductor memory (2010-10-05),
8. 7642829 - Duty detection circuit (2010-01-05),
9. 7562269 - Semiconductor storage device (2009-07-14),
10. 7542359 - Semiconductor memory (2009-06-02),
11. 7492661 - Command generating circuit and semiconductor memory device having the same (2009-02-17),
12. 7436729 - Fuse circuit and semiconductor device using fuse circuit thereof (2008-10-14),
13. 7411435 - Duty detection circuit (2008-08-12),
14. 7304900 - Semiconductor memory (2007-12-04),
15. 7276950 - Prevention of the propagation of jitters in a clock delay circuit (2007-10-02),

Title: Innovations in Semiconductor Technology: The Legacy of Kanji Oishi

Introduction

Kanji Oishi, a prominent inventor based in Tokyo, Japan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 40 patents, his work has paved the way for innovations that enhance the performance and reliability of electronic devices.

Latest Patents

Among his latest inventions are the "Voltage Level Shift Circuit" and "Semiconductor Device." The voltage level shift circuit is designed to suppress response characteristics that vary with input signal levels. It produces an output signal VOUT with a different voltage amplitude than the input signal, ensuring consistent performance across various signal conditions. In addition, his semiconductor device features a data transmission line with a precharge circuit that optimizes data writing processes. This circuit adjusts the precharge potential based on whether data masking is applied, thereby facilitating better performance under different operational modes.

Career Highlights

Oishi's career includes pivotal roles at leading technology companies such as Elpida Memory, Inc. and Hitachi, Ltd. His work in these organizations has not only led to numerous patents but has also influenced the development of modern memory and data processing technologies.

Collaborations

Throughout his career, Oishi has worked alongside notable professionals, including Kunio Uchiyama and Hirokazu Aoki. These collaborations have contributed to advancing research and development initiatives in semiconductor technology.

Conclusion

Kanji Oishi's extensive portfolio of patents and his impactful collaborations underscore his importance in the semiconductor industry. His innovative inventions continue to shape the future of technology, reflecting a commitment to excellence and a passion for advancing electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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