Wuhan, China

Kaijin Huang

This inventor holds 4 USPTO granted patents and 2 published patent applications. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2022-2025.

USPTO Granted Patents = 4 

% Patents Active = 100.0

Average Co-Inventor Count = 1.5

ph-index = 1


Company Filing History:


Years Active: 2022-2025

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4 patents (USPTO):Explore Patents

Title: Kaijin Huang: Innovator in Memory Device Technology

Introduction

Kaijin Huang is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory device technology, holding a total of 4 patents. His work focuses on enhancing the efficiency and functionality of memory devices, which are crucial in modern computing.

Latest Patents

Huang's latest patents include innovative designs and methods for memory devices. One of his notable patents is titled "Memory device and program operation thereof." This invention outlines a memory device that includes a first memory string and a peripheral circuit. The design features a first drain, a first drain select gate (DSG) transistor, and a first drain dummy transistor, among other components. The method for operating this memory device involves applying specific voltages to control the operation of the memory cells effectively.

Another significant patent is "Erasing and erasing verification for three-dimensional NAND memory." This patent describes a method for erasing memory cells and verifying the erase process. The method includes applying an initial erase voltage that is incrementally increased until the memory cells pass an initial verification. It also details the process of applying sub-erase verification voltages to ensure the reliability of the memory cells.

Career Highlights

Kaijin Huang is currently employed at Yangtze Memory Technologies Co., Ltd. His role at the company allows him to work on cutting-edge memory technology, contributing to advancements in the field. His expertise and innovative approach have positioned him as a key figure in the development of memory devices.

Collaborations

Huang collaborates with talented individuals in his field, including coworkers Jin Lyu and Gang Liu. Their combined efforts contribute to the ongoing research and development of memory technologies.

Conclusion

Kaijin Huang is a distinguished inventor whose work in memory device technology has led to several important patents. His contributions are shaping the future of memory devices, making significant strides in the industry.

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