Singapore, Singapore

Kai Cheng

This inventor holds 4 USPTO granted patents and 1 published patent application and 2 EPO patents. Top assignee: United Microelectronics Corp.. Active years: 2021-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kai Cheng. Retrieved from https://idiyas.com/inventor/kai-cheng-07oaax7z

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2021-2024

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4 patents (USPTO):Explore Patents

Title: **Innovative Contributions of Inventor Kai Cheng in Semiconductor Technology**

Introduction

Kai Cheng is a renowned inventor based in Singapore, known for his significant contributions to the field of semiconductor technology. With a total of four patents to his name, Cheng has demonstrated remarkable ingenuity and expertise, particularly in the design and fabrication of advanced semiconductor devices.

Latest Patents

One of Kai Cheng's latest patents is titled "Semiconductor device and method of fabricating the same." This innovative method involves providing a semiconductor structure that includes a buried dielectric layer, a first gate structure located on the front side of the buried dielectric layer, and both a first and second source/drain region positioned between the buried dielectric layer and the first gate structure. The process then entails forming a trench in the buried dielectric layer, followed by the creation of a conductive layer on the buried dielectric layer as well as within the trench. Finally, the conductive layer is patterned to complete the semiconductor device.

Another notable aspect of this patent is the description of the semiconductor device itself, which encompasses elements such as a buried dielectric layer, a first gate structure, a second gate structure, and various source/drain regions. The device's design is optimized for efficiency, featuring a trench that houses a contact layer, which is electrically coupled to the second source/drain region. Notably, both the contact structure and the second gate structure are constructed from the same material, enhancing the device's performance.

Career Highlights

Kai Cheng is currently employed at United Microelectronics Corporation, where he continues to push the boundaries of semiconductor innovation. His work has significantly impacted the field, and he is recognized for integrating complex designs with practical fabrication methods.

Collaborations

Throughout his career, Kai Cheng has had the privilege of working alongside talented colleagues, including Purakh Raj Verma and Li Wang. Their collaboration has fostered a creative environment that propels new ideas and advancements in semiconductor technology.

Conclusion

With a focus on developing cutting-edge semiconductor devices, Kai Cheng exemplifies the spirit of innovation. His patents reflect a deep understanding of material science and engineering principles, promising to influence future advancements in the industry. As he continues his work at United Microelectronics Corporation, the impact of his inventions is set to grow, making him a vital figure in the world of semiconductor technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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