The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2022
Filed:
Jan. 04, 2021
United Microelectronics Corp., Hsin-Chu, TW;
Purakh Raj Verma, Singapore, SG;
Ching-Yang Wen, Pingtung County, TW;
Li Wang, Singapore, SG;
Kai Cheng, Singapore, SG;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device comprises a buried dielectric layer, a first gate structure, a second gate structure, a first source/drain region, a second source/drain region, a front-side metallization, a backside metallization, and conductive contacts. The first gate structure and the second gate structure disposed respectively in the front-side and back side of the dielectric layer, the first source/drain region and the second source/drain region are disposed between the first gate structure and the second gate structures. The front-side metallization is disposed on the front-side of the buried dielectric layer, and the backside metallization is disposed on the backside of the buried dielectric layer. The conductive contacts penetrate the buried dielectric layer and electrically couple the front-side metallization to the backside metallization.