Company Filing History:
Years Active: 2007-2021
Title: Innovations of Inventor Kai-An Hsueh
Introduction
Kai-An Hsueh is a notable inventor based in Miaoli County, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of five patents. His work focuses on memory structures and manufacturing methods, showcasing his expertise in innovative design and engineering.
Latest Patents
One of his latest patents is titled "Memory structure and manufacturing method thereof." This patent describes a memory structure that includes a substrate, a charge storage layer, a first gate, a first dielectric layer, and a second dielectric layer. The substrate features a memory cell region, and the charge storage layer is strategically located on the substrate within this region. The charge storage layer has a recess and a tip around it, enhancing its functionality. Another significant patent is the "Method of forming semiconductor structure." This patent outlines a method for creating a semiconductor structure that involves a substrate with a cell area and a periphery area. It details the formation of a stacked structure, including a gate oxide layer and a floating gate, along with the creation of doped regions and dielectric layers.
Career Highlights
Throughout his career, Kai-An Hsueh has worked with prominent companies in the semiconductor industry, including Maxchip Electronics Corporation and Powerchip Semiconductor Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in technology.
Collaborations
Kai-An Hsueh has collaborated with several professionals in his field, including Chen-Chiu Hsu and Tung-Ming Lai. These collaborations have fostered innovation and have been instrumental in the development of his patented technologies.
Conclusion
Kai-An Hsueh's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His innovative approaches continue to influence advancements in memory structures and manufacturing methods.