The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Oct. 01, 2012
Chen-chiu Hsu, Hsinchu, TW;
Tung-ming Lai, Hsinchu, TW;
Kai-an Hsueh, Miaoli County, TW;
Ming-de Huang, New Taipei, TW;
Chen-Chiu Hsu, Hsinchu, TW;
Tung-Ming Lai, Hsinchu, TW;
Kai-An Hsueh, Miaoli County, TW;
Ming-De Huang, New Taipei, TW;
Maxchip Electronics Corp., Hsinchu, TW;
Abstract
A method of forming a semiconductor structure is provided. A substrate having a cell area and a periphery area is provided. An oxide material layer and a first conductive material layer are sequentially formed on the substrate in the cell and periphery areas. A patterning step is performed to form first and second stacked structures on the substrate respectively in the cell and periphery areas. First and second spacers are formed respectively on sidewalls of the first and second stacked structures. At least two first doped regions are formed in the substrate beside the first stacked structure, and two second doped regions are formed in the substrate beside the second stacked structure. A dielectric layer and a second conductive layer are formed at least on the first stacked structure. The first stacked structure, the dielectric layer, and the second conductive layer in the cell area constitute a charge storage structure.