The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2021
Filed:
Jul. 12, 2020
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Chen-Chiu Hsue, Hsinchu, TW;
Hsun-Kuei Chan, Hsinchu County, TW;
Kai-An Hsueh, Miaoli County, TW;
Ming-Te Huang, New Taipei, TW;
Li-Tsen Jiang, Taoyuan, TW;
Hung-Kwei Liao, Taoyuan, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A memory structure including a substrate, a charge storage layer, a first gate, a first dielectric layer, and a second dielectric layer is provided. The substrate includes a memory cell region. The charge storage layer is located on the substrate in the memory cell region. The charge storage layer has a recess. The charge storage layer has a tip around the recess. The first gate is located on the charge storage layer. The first dielectric layer is located between the charge storage layer and the substrate. The second dielectric layer is located between the first gate and the charge storage layer.