Ming-Te Huang

Title: The Innovative Contributions of Ming-Te Huang

Introduction

Ming-Te Huang is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in memory structures. His work has led to advancements that enhance the efficiency and performance of memory devices.

Latest Patents

Ming-Te Huang holds a patent for a "Memory structure and manufacturing method thereof." This innovative memory structure includes a substrate, a charge storage layer, a first gate, a first dielectric layer, and a second dielectric layer. The substrate features a memory cell region, while the charge storage layer is strategically located on the substrate within this region. Notably, the charge storage layer has a recess and a tip around the recess, which contributes to its functionality. The first gate is positioned on the charge storage layer, with the first dielectric layer situated between the charge storage layer and the substrate, and the second dielectric layer located between the first gate and the charge storage layer.

Career Highlights

Ming-Te Huang is currently employed at Powerchip Semiconductor Manufacturing Corporation, a leading company in the semiconductor industry. His role at the company allows him to apply his expertise in memory technology and contribute to the development of cutting-edge semiconductor solutions.

Collaborations

Ming-Te Huang has collaborated with esteemed colleagues such as Chen-Chiu Hsue and Hsun-Kuei Chan. These collaborations have fostered an environment of innovation and have led to the successful development of advanced technologies in the semiconductor field.

Conclusion

Ming-Te Huang's contributions to memory structure technology exemplify his innovative spirit and dedication to advancing semiconductor manufacturing. His patent and work at Powerchip Semiconductor Manufacturing Corporation highlight his role as a key player in the industry.