This inventor holds 15 USPTO granted patents. Top assignees: Oki Electric Industry Co., Ltd., Tokyo Ohka Kogyo Co., Ltd., Other. Active years: 1998-2012.
Company Filing History:
10 out of 4,980 
4 out of 1,236 
4 out of 834,411 Years Active: 1998-2012
Title: Juro Mita: Innovator in Semiconductor Technology
Introduction
Juro Mita is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work focuses on improving the efficiency and performance of field effect transistors.
Latest Patents
One of Juro Mita's latest patents is a method of manufacturing a field effect transistor that features an Ohmic electrode in a recess. This innovation reduces the contact resistance between the Ohmic electrode and the electron transit layer compared to traditional methods. The design involves an electron transit layer formed from a first semiconductor layer on a substrate, along with an electron supply layer made from a second semiconductor layer that forms a heterojunction with the electron transit layer. The end portion of the Ohmic electrode is strategically positioned within the electron transit layer, penetrating into the electron supply layer at a depth equal to or greater than the heterointerface.
Career Highlights
Throughout his career, Juro Mita has worked with notable companies, including Oki Electric Industry Co., Ltd. His expertise in semiconductor technology has led to advancements that benefit various applications in electronics.
Collaborations
Juro Mita has collaborated with esteemed colleagues such as Yoshihiro Sawada and Akira Hashimoto. Their combined efforts have contributed to the development of innovative technologies in the semiconductor industry.
Conclusion
Juro Mita's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in electronic devices and systems.