The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 1999

Filed:

Dec. 17, 1996
Applicant:
Inventors:

Ichiro Koiwa, Tokyo, JP;

Juro Mita, Tokyo, JP;

Takao Kanehara, Tokyo, JP;

Akira Hashimoto, Yokohama, JP;

Yoshihiro Sawada, Yokohama, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B / ;
U.S. Cl.
CPC ...
428469 ; 428472 ; 428701 ; 428702 ;
Abstract

An object of the present invention is to reduce a leakage current of a Pb Zr Ti O base ferroelectric thin film when a voltage is applied. A ferroelectric thin film comprising a composition of PbZr.sub.x Ti.sub.1-x Sb.sub.y O.sub.3 (where 0<x<1, 0.0001.ltoreq.y.ltoreq.0.05) is provided herein as well as a method of producing it. The presence of the Sb serves to reduce the leakage current of the film when a voltage is applied.


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