Oki Electric Industry Co., Ltd.

Other

Tokyo Ohka Kogyo Co., Ltd.

Juro Mita

Akira Hashimoto

Yoshihiro Sawada

Ichiro Koiwa

Yoshinori Maeno

Katsuaki Kaifu

Yukihisa Okada

Hiroyo Kato

Takao Kanehara

Tetsuya Osaka

Takeshi Koyano

Haruki Yamane

The contact resistance between an Ohmic electrode and an electron transit layer is reduced compared with a case in which the Ohmic electrode is provided to a depth less than the heterointerface. As a result, for an Ohmic electrode provided in a structure comprising an electron transit layer formed of a first semiconductor layer formed on a substrate, an electron supply layer comprising a second semiconductor layer forming a heterojunction with the electron transit layer and having a smaller electron affinity than the first semiconductor layer, and a two-dimensional electron layer induced in the electron transit layer in the vicinity of the heterointerface, the end portion of the Ohmic electrode is positioned in the electron transit layer in penetration into the electron supply layer at a depth equal to or greater than the heterointerface.

Method of manufacturing field effect transistor having Ohmic electrode in a recess

Field effect transistor having Ohmic electrode in a recess

There is provided an etching method in which a protective film existing in an etching-destined region of a substrate structure is removed by means of ICP-RIE to form an exposure region of the principal surface of the substrate. The substrate structure comprises a substrate, a protective film formed on the substrate, a photoresist layer formed on the protective film, and a hole formed throughout the photoresist layer. The hole comprises an opening formed in the photoresist layer surface and a hollow linked to the opening in the thickness direction of the photoresist layer and reaching the protective film. ICP-RIE is performed under conditions such that (1) ICP power is 20 to 100 W, (2) RIE power is 5 to 50 W, and (3) the pressure in the etching chamber is 1 to 100 mTorr.

Etching method, method of fabricating metal film structure, and etching structure

Polymer material for use in optical communication parts

The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and an organometallic compound obtainable by hydrolyzing composite metal alkoxides, formed by any two or more of said metal alkoxides, with water alone or in combination with a catalyst, and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; a ferroelectric thin film ( ), a ferroelectric capacitor ( ) and a ferroelectric memory with the use of such a coating solution; and a method for producing the same.

COATING SOLUTIONS FOR USE IN FORMING BISMUTH-BASED FERROELECTRIC THIN FILMS, AND FERROELECTRIC THIN FILMS, FERROELECTRIC CAPACITORS AND FERROELECTRIC MEMORIES FORMED WITH SAID COATING SOLUTIONS, AS WELL AS PROCESSES FOR PRODUCTION THEREOF

An object of the present invention is to reduce a leakage current of a Pb Zr Ti O base ferroelectric thin film when a voltage is applied. A ferroelectric thin film comprising a composition of PbZr Ti Sb O (where 0 <x<1, 0.0001&lE;y&lE;0.05) is provided herein as well as a method of producing it. The presence of the Sb serves to reduce the leakage current of the film when a voltage is applied.

Ferroelectric thin film, production method thereof and coating liquid for making thin film

A polymer pattern forming method including the steps of (a) generating radicals in a pattern forming region of a matrix layer which uniformly contains a radical generating agent, thereby forming a patterned latent image due to the radicals in the pattern forming region; and (b) bringing a monomer which polymerizes by radical polymerization into contact with the matrix layer in which the patterned latent image has been or is being formed, to have the radicals which have been or are being generated induce a chain addition polymerization of the monomer so as to form a polymer pattern on the pattern forming region.

Polymer pattern forming method

An optical waveguide having a clad and a core, the core being made of polymer material containing a repetitive unit having formula (1), (2) or (3):

Optical waveguide made of polymer material and a method of fabricating the same

The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi. Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and contains composite metal alkoxides formed by any two or more of said metal alkoxides; and a ferroelectric thin film, a ferroelectric capacitor and a ferroelectric memory formed by the use of such coating solution, and a method for producing the same.

Coating solutions for use in forming bismuth-based ferroelectric thin films, and ferroelectric memories formed with said coating solutions, as well as processes for production thereof

The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and an organometallic compound obtainable by hydrolyzing composite metal alkoxides, formed by any two or more of said metal alkoxides, with water alone or in combination with a catalyst, and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; a ferroelectric thin film (,), a ferroelectric capacitor (,) and a ferroelectric memory with the use of such a coating solution; and a method for producing the same.

Coating solutions for use in forming bismuth-based ferroelectric thin films, and ferroelectric thin films, ferroelectric capacitors and ferroelectric memories formed with said coating solutions, as well as processes for production thereof

Coating solutions for use in forming bismuth-based ferroelectric thin

A magnetoresistive sensor has a magnetic bias field source that generates an alternating magnetic bias field, a giant magnetoresistive sensing element positioned in the alternating magnetic bias field, and a resistance detecting circuit that detects changes in the electrical resistance of the giant magnetoresistive sensing element caused by the combined action of the alternating magnetic bias field and an external magnetic field. The alternating magnetic bias field enables small external magnetic fields to be detected with high sensitivity.

Magnetoresistive sensor and head with alternating magnetic bias field

An object of the present invention is to reduce a leakage current of a Pb Zr Ti O base ferroelectric thin film when a voltage is applied. A ferroelectric thin film comprising a composition of PbZr.sub.x Ti.sub.1-x Sb.sub.y O.sub.3 (where 0&lt;x&lt;1, 0.0001.ltoreq.y.ltoreq.0.05) is provided herein as well as a method of producing it. The presence of the Sb serves to reduce the leakage current of the film when a voltage is applied.

Ferroelectric thin film, making method thereof and coating liquid for

Alkoxymetals, .beta.-diketones or metal acetates which are metal compounds corresponding independently to Bi, metallic element A (which is at least one member of the group consisting of Ca, Ba, Sr, Pb and Bi) and metallic element B (which is at least one member of the group consisting of Ti, Nb and Ta) are reacted with alcohols, carboxylic anhydrides, glycols, .beta.-diketones or dicarboxylic acid monoesters to prepare compounds for inclusion in coating solutions for use in forming Bi-based dielectric thin films. The coating solutions are used to produce dielectric thin films or memories.

Growing community of inventors

Tokyo, Japan

Juro Mita