Yokkaichi, Japan

Junichi Shiozawa

This inventor holds 13 USPTO granted patents. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1995-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Junichi Shiozawa. Retrieved from https://idiyas.com/inventor/junichi-shiozawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 69.2

Average Co-Inventor Count = 2.5

ph-index = 3

Forward Citations = 72(Granted Patents)


Location History:

  • Tokyo, JP (1995)
  • Mie, JP (2004 - 2010)
  • Yokohama, JP (2010 - 2013)
  • Yokkaichi, JP (2008 - 2014)

Company Filing History:


Years Active: 1995-2014

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13 patents (USPTO):Explore Patents

Title: Junichi Shiozawa: Innovator in Semiconductor Technology

Introduction

Junichi Shiozawa is a prominent inventor based in Yokkaichi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Shiozawa's latest patents include a semiconductor device that features an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrode. This innovative design includes a first isolation formed on a semiconductor substrate, isolating a first element region via the first isolation. A first gate insulating film is created on the first element region, with a first gate electrode positioned on top. Additionally, a second isolation is formed on the semiconductor substrate, isolating a second element region. The design also incorporates a second gate insulating film and a second gate electrode. Notably, the first oxide film is thinner than the second oxide film, which enhances the device's performance.

Another significant patent involves a method of manufacturing a semiconductor device. This method includes forming a conductive film and an insulation film on a semiconductor substrate. The process utilizes oxidizing ions or nitriding ions contained in plasma to perform anisotropic oxidation or nitridation of the exposed surfaces, thereby improving the device's characteristics.

Career Highlights

Junichi Shiozawa is associated with Kabushiki Kaisha Toshiba, where he has been instrumental in advancing semiconductor technologies. His innovative approaches have led to numerous patents that contribute to the efficiency and functionality of semiconductor devices.

Collaborations

Shiozawa has collaborated with notable colleagues, including Yoshio Ozawa and Isao Kamioka. Their combined expertise has fostered advancements in semiconductor research and development.

Conclusion

Junichi Shiozawa's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence the development of advanced semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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